Lead Memory Design Engineer: DRAM & HBM
micron technologyRichardson, TX
Lead Memory Design Engineer: DRAM & HBM
micron technologyRichardson, TXLead L6
Semiconductor and Related Device ManufacturingElectronic Computer ManufacturingComputer Storage Device Manufacturing
APPLY NOW (opens in a new tab)Micron Technology in Texas is seeking a Principal Design Engineer to architect high‑performance DRAM circuits for advanced memory nodes. You will lead layout, verification, and silicon validation with cross‑functional teams to deliver scalable, manufacturable solutions.
The role requires strong CMOS/VLSI background and hands‑on Cadence Virtuoso experience, plus circuit simulation using FINESIM, HSPICE, and Verilog.
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Level
Lead L6
Location
Richardson, TX
Occupation
Microsystems Engineers
Industry
Semiconductor and Related Device Manufacturing
Posted
today