Lead III-V Microelectronics Device Engineer (GaN/InP)

Northrop Grumman's Microelectronics Center in Redondo Beach seeks a Microelectronics Device Engineer to lead development of III-V technologies, including GaN and InP, advancing from R&D to production in a fast-paced lab environment. You will design millimeter-wave transistors, perform device characterization, root-cause analysis, and collaborate with process, circuit, and test groups; a DoD Secret clearance and US citizenship are required.