Lead / Principal Epitaxial Engineer A global leader in compound semiconductor and photonics technology is seeking a Lead / Principal Epitaxial Engineer to lead the development of advanced MOCVD epitaxial growth processes supporting next-generation InP and GaAs optoelectronic devices. This is a highly technical engineering role focused on new product development, epitaxial process innovation, and continuous process improvement within a high-volume manufacturing environment. The successful candidate will partner closely with Device Design, Product Engineering, and Manufacturing teams to develop new epitaxial structures, improve device performance, and drive process capability from R&D through production. This opportunity is ideal for an experienced epitaxy engineer who enjoys solving complex materials and process challenges while serving as a technical leader within a collaborative engineering organization.
What You'll Do:- Lead the development and optimization of MOCVD epitaxial growth processes for InP and GaAs-based optoelectronic devices
- Partner with Design and Product Engineering teams to develop new epitaxial structures and support new product introductions
- Drive process improvements focused on yield, throughput, capacity, cost, and overall manufacturing performance
- Analyze epitaxial growth data using SPC, DOE, JMP, and other statistical tools to improve process capability
- Develop and implement characterization methods using XRD, ECV, photoluminescence (PL), reflectance, and related techniques
- Troubleshoot complex process issues and implement corrective actions to improve process stability
- Present technical findings and development results to engineering leadership and cross-functional teams
- Support technology transfer from development into high-volume manufacturing while ensuring process consistency and compliance
- What You BringM.S. in Chemical Engineering, Materials Science, Physics, Electrical Engineering, or a related technical discipline (or equivalent experience)5+ years of experience with MOCVD crystal growth of InP, GaAs, or other III-V compound semiconductor materials
- Strong understanding of epitaxial growth processes and compound semiconductor device technology
- Experience using epitaxial characterization tools including XRD, ECV, PL, and reflectance
- Knowledge of SPC, DOE, Gage studies, process control, and statistical data analysis
- Experience using JMP or similar statistical software preferred
- Strong technical problem-solving, communication, and collaboration skills
- Ability to manage multiple technical projects within a fast-paced manufacturing environment
Preferred Qualifications:- Experience developing epitaxial structures for lasers, EMLs, DMLs, photodiodes, VCSELs, or other optoelectronic devices
- Experience supporting both R&D and high-volume manufacturing
- Background leading new process development or technology transfer projects
- Experience mentoring engineers or serving as a technical lead
- Familiarity with semiconductor manufacturing and cleanroom environments
- Why This Opportunity
- Lead development of advanced InP and GaAs technologies used in AI infrastructure, optical networking, and next-generation datacenter applications
- High-impact technical leadership role with direct influence on new product development
- Opportunity to work alongside world-class experts in compound semiconductor technology
- Collaborative environment with strong interaction across Design, Product, and Manufacturing Engineering
- Exposure to both cutting-edge R&D and high-volume semiconductor manufacturing
- Competitive compensation, annual bonus opportunity, and comprehensive benefits
- Long-term career growth within a global technology leader in photonics and semiconductor innovation
