Senior Electron Microscopy Engineer

Job Duties: Perform advanced electron microscopy analysis usingFIB, SEM, EDX/EDS, TEM/STEM, HRTEM, and electron diffractionto identify defects, interfaces, compositional abnormalities, and failure mechanisms. Develop advanced FIB sample-preparation methods, includingsite-specific cross-sectional TEM lamella preparation, plan-view TEM preparation, low-damage thinning, and preparation of challenging semiconductor device structures .Analyze crystallographic and process-induced defects such as dislocations, stacking faults, interface defects, regrowth defects, contamination, and other microstructural abnormalities, with emphasis on understanding theirformation mechanisms and process origins .Correlate microscopy results with epitaxy, wafer-fabrication processes, device performance, reliability testing, and yield data to support root-cause analysis and process improvement. Oversee microscopy laboratory operations, equipment performance, analytical methods, and sample-preparation capabilities. Develop and maintain SOPs and analytical procedures, and train technicians and engineers in microscopy operation, sample preparation, and data interpretation. Collaborate with Process Engineering, Epitaxy, Yield, Reliability, Quality, and R&D teams to investigate product failures and manufacturing issues. Work with equipment vendors, universities, and external laboratories to introduce advanced microscopy technologies and expand analytical capability. Prepare technical reports and clearly present analysis results, defect mechanisms, root-cause conclusions, and recommendations to technical teams and management.

Qualifications: Ph. D. in Materials Science, Physics, Electrical Engineering, or a related field with 5+ years of relevant industrial experience, or equivalent industrial experience demonstrating comparable technical expertise. Recognized expertise in advanced electron microscopy, including FIB, SEM, EDX/EDS, TEM/STEM, HRTEM, and electron diffraction, with deep hands-on experience in advanced FIB sample preparation such asplan-view TEM specimens and site-specific cross-sectional lamellae .Strong knowledge of crystallography, semiconductor defects, and defect-formation mechanisms, with demonstrated ability to identify defects and determine their likely materials or process origins. Strong knowledge of semiconductor devices and manufacturing processes, preferably compound semiconductor lasers, includingepitaxy, e-beam lithography, photolithography, wet and dry etching, PVD, CVD, metallization, and epitaxial regrowth .Preferred Experience Experience with InP, InGaAs, InGaAsP, DFB lasers, EMLs, quantum-well structures, buried heterostructures, and semiconductor laser failure analysisis highly desirable.

Location: Sugar Land, Texas — On-site.