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RF Technology Development Epitaxy and Integration Engineer – Principal Engineer

globalfoundriesEssex Junction, VTManager L7

$85,000 per year

Engineers, All OtherElectronics Engineers, Except ComputerArchitectural and Engineering Managers
Semiconductor and Related Device ManufacturingOther Electronic Component ManufacturingResearch and Development in the Physical, Engineering, and Life Sciences
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RF Technology Development Organization Epitaxy And Integration Engineer GlobalFoundries is a leading full-service semiconductor foundry with a global manufacturing footprint spanning three continents. Global Foundries' RF Technology Development Organization is looking for an epitaxy and integration engineer in developing semiconductor technologies to join our RF team in Essex Junction, VT.
Essential Responsibilities:
  • Develop, evaluate and qualify CVD Si / SiGe epitaxial process.
  • Define epitaxial growth conditions and controls methodology to meet both the technology performance requirements and the manufacturability criteria
  • Responsible for development, optimization, and qualification of FEOL semiconductor devices and processes to meet performance, cost and yield requirements
  • Drive integration optimization using DOE methodologies, statistical analysis, and yield learning techniques.
  • Partner with unit process module engineers, failure analysis and characterization team to improve device performance and yield
  • Own and drive technical process problem solving.
  • Interact with internal & external customers and respond to technical queries.
  • Establish new technology design rules, test structures and test methodologies.
  • Innovate new methods of continuous process/device improvement.
Other Responsibilities: Perform all activities in a safe and responsible manner and support all Environmental, Health, Safety & Security requirements and programs.
Required Qualifications
Education: Graduating with Master's or PhD in Electrical, Materials Science, or other relevant engineering or physical science discipline from an accredited degree program. Familiarity with epitaxial growth techniques and hands-on experience with epitaxial growth – silicon or III-VMust have at least an overall 3.0 GPA and proven good academic standing. Language Fluency - English (Written & Verbal)
Preferred Qualifications:
  • Minimum 2 Years of Experience in Silicon or SiGe BiCMOS FEOL or BEOL or III-V processing and/or semiconductor process development
  • Minimum 2 years of relevant epitaxial growth engineering experience.
  • Knowledge of semiconductor device physics and/or RF fundamentals (e.g. S-parameters)
  • Prior related internship or co-op experience.
  • Demonstrated prior leadership experience in the workplace, school projects, competitions, etc.
  • Project management skills, i.e. the ability to innovate and execute solutions that matter; the ability to navigate ambiguity.
  • Strong written and verbal communication skills
  • Strong planning & organizational skills
  • Expected Salary Range$85,000.00 - $146,000.00 The exact Salary will be determined based on qualifications, experience and location.

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Level

Manager L7

Salary

$85,000 per year

Location

Essex Junction, VT

Occupation

Engineers, All Other

Industry

Semiconductor and Related Device Manufacturing

Posted

2 days ago

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