Entry-Level SRAM Memory Design Engineer - Hybrid
intelAustin, TX
Entry-Level SRAM Memory Design Engineer - Hybrid
intelAustin, TXLead L6
Semiconductor and Related Device ManufacturingElectronic Computer ManufacturingPrinted Circuit Assembly (Electronic Assembly) Manufacturing
APPLY NOW (opens in a new tab)Intel Corporation's Corporate Memory Organization seeks a Circuit Design Engineer to architect, design, and deliver SRAM compilers across high density and high performance profiles. You will collaborate with the DTCO team to co-define silicon process and layout rules while contributing to compiler design flows.
This entry-level role emphasizes industry-competitive SRAM solutions, design validation, and memory compiler workflows, with a hybrid work model and relocation flexibility within the US.
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Level
Lead L6
Location
Austin, TX
Occupation
Computer Hardware Engineers
Industry
Semiconductor and Related Device Manufacturing
Posted
yesterday