Job Title: Sr. GaN Device Engineer
Location: Somerville, MA - will provide relocation assistance!
Compensation:
$150K - $250K DOERequirement: MS or PhD w/ 5+ years of Gallium Nitride (GaN) or wide bandgap semiconductor device design Position Overview We are seeking a skilled GaN Device Engineer to join our innovative team. The ideal candidate will be responsible for the design, modeling, and development of Gallium Nitride (GaN) semiconductor devices, focusing on enhancing performance and efficiency in power applications.
Key Responsibilities:
Design and develop Gallium Nitride (GaN) semiconductor devices for various applications.
Perform device modeling and simulation to predict performance characteristics.
Collaborate with cross-functional teams to integrate GaN devices into larger systems. Conduct experiments and tests to validate device performance and reliability.
Stay updated on industry trends and advancements in wide bandgap semiconductor technology.
Qualifications:- MS (PhD preferred) in Electrical Engineering, Materials Science, or a related field
- Proven experience in semiconductor device design, particularly with wide bandgap (GaN or SiC) technology Strong understanding of power device design and modeling techniques.
- Experience with wide bandgap semiconductors and their applications.
- Excellent problem-solving skills and ability to work in a collaborative environment.
Benefits:- Medical/Dental/Vision benefits
- Vacation/PTOStock Option Program
- Flexible Work Arrangements
